MnSi1.7_{1.7} nanoparticles embedded in Si: Superparamagnetism with a collective behavior

The doping of Mn in Si is attracting research attentions due to the possibility to fabricate Si-based diluted magnetic semiconductors. However, the low solubility of Mn in Si favors the precipitation of Mn ions even at non-equilibrium growth conditions. MnSi$_{1.7}$ nanoparticles are the common precipitates, which show exotic magnetic properties in comparison with the MnSi$_{1.7}$ bulk phase. In this paper we present the static and dynamic magnetic properties of MnSi$_{1.7}$ nanoparticles. Using the Preisach model, we derive the magnetic parameters, such as the magnetization of individual particles, the distribution of coercive fields and the inter-particle interaction field. Time-dependent magnetization measurements reveal a spin-glass behavior of the system.Comment: 11 pages, 6 figures, submitted to PR

Avaliação da composição química de cogumelos comestíveis comercializados na região de Curitiba, PR.

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Absence of ferromagnetism in V-implanted ZnO single crystals

The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no pronounced ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.Comment: 13 pages, 4 figs, MMM conference 2007, accepted by J. Appl. Phy

Origin of magnetic moments in defective TiO2 single crystals

In this paper we show that ferromagnetism can be induced in pure TiO2 single crystals by oxygen ion irradiation. By combining x-ray diffraction, Raman-scattering, and electron spin resonance spectroscopy, a defect complex, \emph{i.e.} Ti$^{3+}$ ions on the substitutional sites accompanied by oxygen vacancies, has been identified in irradiated TiO2. This kind of defect complex results in a local (TiO$_{6-x}$) stretching Raman mode. We elucidate that Ti$^{3+}$ ions with one unpaired 3d electron provide the local magnetic moments.Comment: 4 pages, 4 figures, to be published at Phys. Rev.

Interface steps in field effect devices

The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which in turn is screened by the doped carriers. We analyze the dipolar electronic structure of a single step in the Thomas-Fermi approximation and find that the transmission coefficient through the step is exponentially suppressed by the electric field and the induced carrier density as well as by the step height. In addition, the field enhancement at the step edge can facilitate the electric breakthrough of the insulating layer. We suggest that these two effects may lead to severe problems when engineering FET devices with very high doping. On the other hand steps can give rise to interesting physics in superconducting FETs by forming weak links and potentially creating atomic size Josephson junctions.Comment: 6 pages, 4 figures, submitted to J. Appl. Phy

The use of xenografts to prevent inferior border defects following bilateral sagittal split osteotomies:three-dimensional skeletal analysis using cone beam computed tomography

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Aplicação do bagaço de cana como biomassa energética e do sulfato de amônia como fonte de nitrogênio para síntese de celulases por Lentinula edodes.

Editores técnicos: Marcílio José Thomazini, Elenice Fritzsons, Patrícia Raquel Silva, Guilherme Schnell e Schuhli, Denise Jeton Cardoso, Luziane Franciscon. EVINCI. Resumos